Please use this identifier to cite or link to this item: https://doi.org/10.1109/2944.605695
Title: Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates
Authors: Xu, S.J. 
Chua, S.J. 
Zhang, X. 
Zhang, Z.H. 
Luo, C.P.
Yuan, Z.L.
Xu, Z.Y.
Zhou, J.M.
Keywords: Photoluminescent materials/devices
Quantum wells
Semiconductor heterojunctions
Semiconductor lasers
Semiconductor measurements
Issue Date: Apr-1997
Source: Xu, S.J., Chua, S.J., Zhang, X., Zhang, Z.H., Luo, C.P., Yuan, Z.L., Xu, Z.Y., Zhou, J.M. (1997-04). Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates. IEEE Journal on Selected Topics in Quantum Electronics 3 (2) : 471-474. ScholarBank@NUS Repository. https://doi.org/10.1109/2944.605695
Abstract: Low-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated. The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE). The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.
Source Title: IEEE Journal on Selected Topics in Quantum Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/80897
ISSN: 1077260X
DOI: 10.1109/2944.605695
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