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|Title:||Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing|
|Authors:||Prakash, S. |
|Citation:||Prakash, S.,Tan, L.S.,Ng, K.M.,Raman, A.,Chua, S.J.,Wee, A.T.S.,Lim, S.L. (2000). Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing. Materials Science Forum 338 : II/-. ScholarBank@NUS Repository.|
|Abstract:||Ohmic contacts have been fabricated on Si doped n-GaN using Ti/Al by low temperature annealing. Contact resistivity values of 8.6×10-6 ohm-cm2 were obtained for 3.67×1018 cm-3 doped samples after annealing at 500 °C. SIMS analysis showed that Al diffused through the Ti layer after annealing. As a result Al low work function metal to n-GaN may have resulted in good ohmic contact. Photoluminescence (PL) showed that there was no degradation in the epilayer quality of the film annealed at this temperature for 25 min.|
|Source Title:||Materials Science Forum|
|Appears in Collections:||Staff Publications|
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