Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80856
Title: Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing
Authors: Prakash, S. 
Tan, L.S. 
Ng, K.M.
Raman, A.
Chua, S.J. 
Wee, A.T.S. 
Lim, S.L. 
Issue Date: 2000
Citation: Prakash, S.,Tan, L.S.,Ng, K.M.,Raman, A.,Chua, S.J.,Wee, A.T.S.,Lim, S.L. (2000). Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealing. Materials Science Forum 338 : II/-. ScholarBank@NUS Repository.
Abstract: Ohmic contacts have been fabricated on Si doped n-GaN using Ti/Al by low temperature annealing. Contact resistivity values of 8.6×10-6 ohm-cm2 were obtained for 3.67×1018 cm-3 doped samples after annealing at 500 °C. SIMS analysis showed that Al diffused through the Ti layer after annealing. As a result Al low work function metal to n-GaN may have resulted in good ohmic contact. Photoluminescence (PL) showed that there was no degradation in the epilayer quality of the film annealed at this temperature for 25 min.
Source Title: Materials Science Forum
URI: http://scholarbank.nus.edu.sg/handle/10635/80856
ISSN: 02555476
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

38
checked on Nov 9, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.