Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80845
Title: Numerical prediction of the etched profile in pyrolytic laser etching of silicon and gallium arsenide
Authors: Wee, T.-S.
Lu, Y.-F. 
Chim, W.-K. 
Keywords: Carbon tetrachloride
Diffused reflection
Gallium arsenide
Heat conduction analysis
Laser etched profile
Laser induced temperature profile
Numerical laser etching model
Pyrolytic laser etching
Silicon
Issue Date: Aug-1997
Source: Wee, T.-S.,Lu, Y.-F.,Chim, W.-K. (1997-08). Numerical prediction of the etched profile in pyrolytic laser etching of silicon and gallium arsenide. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (8) : 5116-5124. ScholarBank@NUS Repository.
Abstract: A quasi-static two-dimensional heat conduction analysis is used to deduce the geometrical profile of a cavity pyrolytically etched on isotropic silicon and GaAs substrates by a stationary CW argon ion laser with a Gaussian intensity profile. The nonlinear problem is solved using the numerical finite element method. Starting with a substrate having a flat surface, the numerical routine progressively removes regions of the substrate to model the actual etching action. Multiple reflections of the laser beam in the etched cavity are also modeled assuming that the substrate surface is perfectly diffused. Laser etching experiments performed on a silicon substrate in a CCl4 gas ambient are used to verify the numerical routine. Comparison between the experimental and the numerical results indicates that the desorption of SiCl2 radicals is probably responsible for the final etched profile obtained. Numerical results are also compared with the experimental data obtained from previous works carried out on a GaAs substrate.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/80845
ISSN: 00214922
Appears in Collections:Staff Publications

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