Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80816
Title: Nickel-platinum alloy monosilicidation-induced defects in n-type silicon
Authors: Chi, D.Z.
Mangelinck, D.
Dai, J.Y.
Lahiri, S.K.
Pey, K.L. 
Ho, C.S.
Issue Date: 5-Jun-2000
Source: Chi, D.Z.,Mangelinck, D.,Dai, J.Y.,Lahiri, S.K.,Pey, K.L.,Ho, C.S. (2000-06-05). Nickel-platinum alloy monosilicidation-induced defects in n-type silicon. Applied Physics Letters 76 (23) : 3385-3387. ScholarBank@NUS Repository.
Abstract: Electrically active defects induced by the formation of nickel-platinum alloy monosilicide (formed at 600-800°C) has been studied in n-type silicon using deep level transient spectroscopy and transmission electron microscopy measurements. A Ni-related electron trap level at Ec-0.42 eV is observed after silicidation at 600°C or above and a Pt-related electron trap level at Ec-0.50 eV is detected after silicidation at 700°C or above. Two hole trap levels at Ev+0.22 and Ev+0.28 eV are also detected, Ev+0.22 eV level for silicidation at 700°C or above and Ev+0.28 eV level for 600 °C silicidation. For the sample silicided at 600°C, an additional electron trap level (located at Ec -0.16 eV) with a broad spectral peak is detected in the near-surface region (
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80816
ISSN: 00036951
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

28
checked on Feb 17, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.