New electron and hole traps in GaAsP alloy

Abstract

Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs0.66P0.4 materials by deep level transient spectroscopy. The dominant electron trap A, which has never previously been reported, has a thermal emission activation energy of Ee A = 0.83 eV and an abnormally large capture activation energy Ec A = 0.73 eV. Hole trap C with thermal emission activation energy of Ee C = 0.65 eV is also new and different from previous reports. A critical comparison of traps reported in this work with traps reported in the existing literature is also made. © 1997 Taylor & Francis Ltd.