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|Title:||New electron and hole traps in GaAsP alloy|
|Authors:||Teo, K.L. |
|Citation:||Teo, K.L.,Li, M.F.,Goo, C.H.,Lau, W.S.,Lim, Y.T. (1997). New electron and hole traps in GaAsP alloy. International Journal of Electronics 83 (1) : 29-35. ScholarBank@NUS Repository.|
|Abstract:||Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs0.66P0.4 materials by deep level transient spectroscopy. The dominant electron trap A, which has never previously been reported, has a thermal emission activation energy of Ee A = 0.83 eV and an abnormally large capture activation energy Ec A = 0.73 eV. Hole trap C with thermal emission activation energy of Ee C = 0.65 eV is also new and different from previous reports. A critical comparison of traps reported in this work with traps reported in the existing literature is also made. © 1997 Taylor & Francis Ltd.|
|Source Title:||International Journal of Electronics|
|Appears in Collections:||Staff Publications|
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