Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80743
Title: Modelling of a resonant tunnelling hot electron transistor
Authors: Sheng, Hanyu 
Chua, Soo-Jin 
Issue Date: Aug-1993
Citation: Sheng, Hanyu, Chua, Soo-Jin (1993-08). Modelling of a resonant tunnelling hot electron transistor. Semiconductor Science and Technology 8 (8) : 1590-1595. ScholarBank@NUS Repository.
Abstract: A semiclassical model of a resonant tunnelling hot electron transistor (RHET) is proposed. The model includes quantum interference and multiple scattering by means of a correlation function and mean free path. The DC properties of a RHET are calculated and analyzed. The results show that the maximum common-emitter current gain of a RHET can be achieved by modulating the base width and barrier height of the emitter resonant tunnelling structure.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/80743
ISSN: 02681242
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on May 18, 2018

WEB OF SCIENCETM
Citations

1
checked on May 22, 2018

Page view(s)

24
checked on Sep 21, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.