Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80734
Title: Modeling and simulation of nonlinear electron-hole plasma in deep submicron n-MOSFET devices
Authors: Rajendran, K. 
Samudra Ganesh, S.
Issue Date: 1999
Source: Rajendran, K.,Samudra Ganesh, S. (1999). Modeling and simulation of nonlinear electron-hole plasma in deep submicron n-MOSFET devices. Journal of Nonlinear Optical Physics and Materials 8 (2) : 289-304. ScholarBank@NUS Repository.
Abstract: Computer simulations were done extensively in order to study nonlinear dynamics of laser and non-equilibrium electron-hole plasma interaction in deep submicron n-MOSFET silicon devices. We constructed the modified Duffing kind of nonlinear electron-hole plasma oscillator equation. Nonlinear characteristics of electron-hole plasma by impact ionization in submicron devices manifest a wide diversity of complex chaotic behavior. Collision frequency is found to be the dominant parameter to influence the bifurcation, chaos, hysteresis and bistable effects of electron-hole plasma at deep submicron devices. Small windows of higher period cascade above the critical value of laser parameter (α1α2) in the chaos region are observed. Non-equilibrium electron-hole plasma shows much chaotic regime at lower value of laser frequency (δ). Hysteresis and bistable region of electron-hole plasma are also presented and the conditions for their occurrence are identified. The unstable region completely merge at higher value of effective collision frequency (γ).
Source Title: Journal of Nonlinear Optical Physics and Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/80734
ISSN: 02188635
Appears in Collections:Staff Publications

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