Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80694
Title: Luminescence properties of ZnSe/ZnS(h 1 1)A low dimensional structures
Authors: Tomasini, P.
Arai, K.
Lu, F.
Cho, M.W.
Zhu, Z.Q.
Yao, T.
Wu, Y.H. 
Sekiguchi, T.
Suezawa, M.
Shen, M.Y.
Goto, T.
Keywords: Epitaxy
Piezoelectricity
Quantum confined Stark effect
Quantum wells
ZnS
ZnSe
Issue Date: 1998
Citation: Tomasini, P.,Arai, K.,Lu, F.,Cho, M.W.,Zhu, Z.Q.,Yao, T.,Wu, Y.H.,Sekiguchi, T.,Suezawa, M.,Shen, M.Y.,Goto, T. (1998). Luminescence properties of ZnSe/ZnS(h 1 1)A low dimensional structures. Journal of Crystal Growth 184-185 : 343-346. ScholarBank@NUS Repository.
Abstract: The power dependence and the temperature dependence of the luminescence intensity of ultra-thin pseudomorphic ZnSe quantum wells, grown on high index GaP substrates were investigated. A blue shift of PL with power excitation is mainly related to the band filling of interfacial ZnSe clusters while it is found that the piezoelectric field has only a small influence. Luminescence spectra of ultra-thin ZnSe/ZnS single quantum wells are characterized by an excitation dependent excitonic localization phenomenon. © 1998 Elsevier Science B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/80694
ISSN: 00220248
Appears in Collections:Staff Publications

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