Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80687
Title: Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers
Authors: Rao, R.V.V.V.J. 
Chong, T.C. 
Lau, W.S. 
Tan, L.S. 
Geng, C. 
Lim, N. 
Issue Date: 15-Oct-1998
Source: Rao, R.V.V.V.J.,Chong, T.C.,Lau, W.S.,Tan, L.S.,Geng, C.,Lim, N. (1998-10-15). Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers. Electronics Letters 34 (21) : 2066-2067. ScholarBank@NUS Repository.
Abstract: Noise spectroscopy has been used to assess the quality of the active layers of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices using transmission line model structures. Noise spectra were studied as a function of insulator thickness. LT-Al0.3Ga0.7As samples and a 500Å thick LT-GaAs sample exhibited 1/f noise. The noise parameter αlatt was found to be of the order 10-4 for these samples. 2000Å LT-GaAs samples exhibited 1/f3/2 noise with 500Hz corner frequency.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80687
ISSN: 00135194
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

20
checked on Feb 17, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.