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https://scholarbank.nus.edu.sg/handle/10635/80687
| Title: | Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers | Authors: | Rao, R.V.V.V.J. Chong, T.C. Lau, W.S. Tan, L.S. Geng, C. Lim, N. |
Issue Date: | 15-Oct-1998 | Citation: | Rao, R.V.V.V.J.,Chong, T.C.,Lau, W.S.,Tan, L.S.,Geng, C.,Lim, N. (1998-10-15). Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers. Electronics Letters 34 (21) : 2066-2067. ScholarBank@NUS Repository. | Abstract: | Noise spectroscopy has been used to assess the quality of the active layers of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices using transmission line model structures. Noise spectra were studied as a function of insulator thickness. LT-Al0.3Ga0.7As samples and a 500Å thick LT-GaAs sample exhibited 1/f noise. The noise parameter αlatt was found to be of the order 10-4 for these samples. 2000Å LT-GaAs samples exhibited 1/f3/2 noise with 500Hz corner frequency. | Source Title: | Electronics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80687 | ISSN: | 00135194 |
| Appears in Collections: | Staff Publications |
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