Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/80681
DC Field | Value | |
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dc.title | Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions | |
dc.contributor.author | Chong, Y.F. | |
dc.contributor.author | Pey, K.L. | |
dc.contributor.author | Lu, Y.F. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Osipowicz, T. | |
dc.contributor.author | Seng, H.L. | |
dc.contributor.author | See, A. | |
dc.contributor.author | Dai, J.-Y. | |
dc.date.accessioned | 2014-10-07T03:00:09Z | |
dc.date.available | 2014-10-07T03:00:09Z | |
dc.date.issued | 2000-11-06 | |
dc.identifier.citation | Chong, Y.F.,Pey, K.L.,Lu, Y.F.,Wee, A.T.S.,Osipowicz, T.,Seng, H.L.,See, A.,Dai, J.-Y. (2000-11-06). Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions. Applied Physics Letters 77 (19) : 2994-2996. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80681 | |
dc.description.abstract | We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing. © 2000 American Institute of Physics. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.contributor.department | PHYSICS | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 77 | |
dc.description.issue | 19 | |
dc.description.page | 2994-2996 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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