Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80681
Title: Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions
Authors: Chong, Y.F.
Pey, K.L. 
Lu, Y.F. 
Wee, A.T.S. 
Osipowicz, T. 
Seng, H.L. 
See, A.
Dai, J.-Y.
Issue Date: 6-Nov-2000
Source: Chong, Y.F.,Pey, K.L.,Lu, Y.F.,Wee, A.T.S.,Osipowicz, T.,Seng, H.L.,See, A.,Dai, J.-Y. (2000-11-06). Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions. Applied Physics Letters 77 (19) : 2994-2996. ScholarBank@NUS Repository.
Abstract: We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing. © 2000 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80681
ISSN: 00036951
Appears in Collections:Staff Publications

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