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|Title:||Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K.,Ong, T.Y.,Tan, L.S.,Loh, F.C.,Tan, K.L. (1998-05-01). Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films. Journal of Applied Physics 83 (9) : 4968-4973. ScholarBank@NUS Repository.|
|Abstract:||The effects of annealing on the structural properties of radio-frequency sputtered amorphous silicon carbide films prepared under different hydrogen partial pressures (PH) were investigated. Infrared (IR) results of the as-prepared films suggest that as PH increases, more hydrogen is incorporated into the film to form the Si-H and C-H bonds and less silicon and carbon atoms are available to form the Si-C bonds. X-ray photoelectron spectroscopy (XPS) results of the as-prepared films agree with the IR results in that the percent of Si-C decreases and the percent of Si-H and C-H increases as PH increases. IR and XPS results of the annealed films suggest that as the annealing temperature increases, the dangling Si and C bonds will combine to form the Si-C bonds for the unhydrogenated samples. The increase in Si-C bonds for the hydrogenated samples is more likely to be due to the formation of Si-C bonds from the breaking up of the Si-H and C-H bonds. © 1998 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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