Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80600
Title: Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films
Authors: Choi, W.K. 
Ong, T.Y.
Tan, L.S. 
Loh, F.C. 
Tan, K.L. 
Issue Date: 1-May-1998
Source: Choi, W.K.,Ong, T.Y.,Tan, L.S.,Loh, F.C.,Tan, K.L. (1998-05-01). Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films. Journal of Applied Physics 83 (9) : 4968-4973. ScholarBank@NUS Repository.
Abstract: The effects of annealing on the structural properties of radio-frequency sputtered amorphous silicon carbide films prepared under different hydrogen partial pressures (PH) were investigated. Infrared (IR) results of the as-prepared films suggest that as PH increases, more hydrogen is incorporated into the film to form the Si-H and C-H bonds and less silicon and carbon atoms are available to form the Si-C bonds. X-ray photoelectron spectroscopy (XPS) results of the as-prepared films agree with the IR results in that the percent of Si-C decreases and the percent of Si-H and C-H increases as PH increases. IR and XPS results of the annealed films suggest that as the annealing temperature increases, the dangling Si and C bonds will combine to form the Si-C bonds for the unhydrogenated samples. The increase in Si-C bonds for the hydrogenated samples is more likely to be due to the formation of Si-C bonds from the breaking up of the Si-H and C-H bonds. © 1998 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/80600
ISSN: 00218979
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

25
checked on Feb 23, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.