Please use this identifier to cite or link to this item: https://doi.org/4/313
Title: Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples
Authors: Remashan, K.
Chua, S.J. 
Ramam, A. 
Prakash, S. 
Liu, W.
Issue Date: Apr-2000
Source: Remashan, K.,Chua, S.J.,Ramam, A.,Prakash, S.,Liu, W. (2000-04). Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples. Semiconductor Science and Technology 15 (4) : 386-389. ScholarBank@NUS Repository. https://doi.org/4/313
Abstract: Inductively coupled plasma (ICP) etching of GaN is investigated using BCl3/Cl2 chemistry. The maximum etch rate is observed when the percentage of Cl2 in the BCl3/Cl2 gas mixture is about 80-100%. From photoluminescence (PL) study of the etched GaN samples, we found that the ICP etching creates non-radiative surface recombination states and it has been observed that the creation of surface states is a minimum when the Cl2 in the BCl3/Cl2, mixture is about 90-100%. The atomic force microscope (AFM) study shows that the etching does not make the surface rough and the root mean square (rms) roughness of the etched surface is about 3-5 nm.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/80593
ISSN: 02681242
DOI: 4/313
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