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|Title:||Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples|
|Citation:||Remashan, K., Chua, S.J., Ramam, A., Prakash, S., Liu, W. (2000-04). Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples. Semiconductor Science and Technology 15 (4) : 386-389. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/15/4/313|
|Abstract:||Inductively coupled plasma (ICP) etching of GaN is investigated using BCl3/Cl2 chemistry. The maximum etch rate is observed when the percentage of Cl2 in the BCl3/Cl2 gas mixture is about 80-100%. From photoluminescence (PL) study of the etched GaN samples, we found that the ICP etching creates non-radiative surface recombination states and it has been observed that the creation of surface states is a minimum when the Cl2 in the BCl3/Cl2, mixture is about 90-100%. The atomic force microscope (AFM) study shows that the etching does not make the surface rough and the root mean square (rms) roughness of the etched surface is about 3-5 nm.|
|Source Title:||Semiconductor Science and Technology|
|Appears in Collections:||Staff Publications|
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