Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80592
Title: Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
Authors: Chua, S.-J. 
Zhang, Z.-H. 
Keywords: AlInGaAs
Incorporation coefficient
MBE
Quantum well
TEM
Issue Date: Jun-1998
Source: Chua, S.-J.,Zhang, Z.-H. (1998-06). Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (6 A) : 3280-3281. ScholarBank@NUS Repository.
Abstract: Using the emission wavelength and well thickness data of AlInGaAs/Al0.3Ga0.7As quantum wells obtained from room temperature photoluminescence and transmission electron microscopy, indium incorporation coefficients are determined for the growth of the quantum wells by molecular beam epitaxy (MBE). At a growth temperature of 600°C, the indium incorporation coefficient is found to be 0.54.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/80592
ISSN: 00214922
Appears in Collections:Staff Publications

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