Please use this identifier to cite or link to this item:
|Title:||Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET|
|Citation:||Low, T., Hou, Y.-T., Li, M.-F. (2003-05). Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET. IEEE Transactions on Electron Devices 50 (5) : 1284-1289. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2003.813469|
|Abstract:||An improved one-band self-consistent effective mass approximation (EMA) for hole quantization in p-MOSFET is presented. It is developed by extracting empirically a set of hole-effective masses based on the rigorous self-consistent six-band EMA. It is found that the self-consistent model using such improved one-band effective masses can provide accurate hole quantization characteristics. For further simplification, the triangular well approximation is also assessed. Fairly accurate MOS electrostatics is also obtained if introducing an effective field in the inversion layer in triangular well approximation. However, the triangular well approximation has its limitation in describing the hole centroid. In essence, the shorter computing time of the proposed improved one-band methods without sacrificing the accuracy of MOS electrostatics provides its potential in device modeling for hole quantization.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 17, 2019
WEB OF SCIENCETM
checked on Jan 9, 2019
checked on Jan 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.