Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.887467
Title: Improved NiSi salicide process using presilicide N2 + implant for MOSFETs
Authors: Lee, P.S.
Pey, K.L. 
Mangelinck, D.
Ding, J. 
Wee, A.T.S. 
Chan, L.
Issue Date: Dec-2000
Citation: Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Wee, A.T.S., Chan, L. (2000-12). Improved NiSi salicide process using presilicide N2 + implant for MOSFETs. IEEE Electron Device Letters 21 (12) : 566-568. ScholarBank@NUS Repository. https://doi.org/10.1109/55.887467
Abstract: An improved Ni salicide process has been developed by incorporating nitrogen (N2 +) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N2 + implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N2 + implant.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80577
ISSN: 07413106
DOI: 10.1109/55.887467
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