Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80546
Title: Hot-carrier reliability of n- and p-channel MOSFETs with polysilicon and CVD tungsten-polycide gate
Authors: Lou, C.L.
Chim, W.K. 
Chan, D.S.H. 
Pan, Y.
Issue Date: Nov-1996
Citation: Lou, C.L.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1996-11). Hot-carrier reliability of n- and p-channel MOSFETs with polysilicon and CVD tungsten-polycide gate. Microelectronics Reliability 36 (11-12 SPEC. ISS.) : 1663-1666. ScholarBank@NUS Repository.
Abstract: Under maximum substrate current (Isub,max) stress, tungsten-polycide gate (WSix) n-MOSFETs are more resistant to hot-carrier degradation than polysilicon gate (PolySi) devices. However, under maximum gate current (Ig,max) stress, WSix n-MOSFETs degrade more severely. WSix p-MOSFETs degrade more than the PolySi p-MOSFETs under both the Isub,max and Ig,max stress. An explanation substantiated by the charge-pumping measurements is proposed. The hot-carrier lifetimes of WSix n-MOSFETs are found to be higher than that of the WSix p-MOSFETs. Copyright © 1996 Elsevier Science Ltd.
Source Title: Microelectronics Reliability
URI: http://scholarbank.nus.edu.sg/handle/10635/80546
ISSN: 00262714
Appears in Collections:Staff Publications

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