Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/11/10/005
Title: Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses
Authors: Lou, C.L.
Chim, W.K. 
Chan, D.S.H. 
Pan, Y.
Issue Date: Oct-1996
Source: Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1996-10). Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses. Semiconductor Science and Technology 11 (10) : 1381-1387. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/10/005
Abstract: Under maximum substrate current (lsub.max) stress (i.e. Vg ≈ Vd/2), the hot-carrier induced degradation of tungsten polycide gate (WSix) n-MOSFETs in the linear drain current and maximum linear transconductance is lower, and the shift in the threshold voltage is higher than that of polysilicon gate (PolySi) n-MOSFETs. However, under maximum gate current (Ig,max) stress (i.e. Vg = Vd), the WSix n-MOSFETs showed higher hot-carrier induced degradation than the PolySi devices. In contrast, WSix p-MOSFETs showed higher degradation compared with the PolySi p-MOSFETs under both lg,max (i.e. Vg < Vd/2) and ISUb,max (i.e. Vg ≈ Vd/2) stresses. An explanation, substantiated by charge-pumping measurements, is proposed to explain the phenomena observed. The hot-carrier lifetime of WSix p-MOSFETs is found to limit the operation of WSix CMOS circuits.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/80545
ISSN: 02681242
DOI: 10.1088/0268-1242/11/10/005
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