Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.925246
Title: Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation
Authors: Hou, Y.T. 
Li, M.-F. 
Keywords: CMOSFETs
Inversion quantization
Quantum mechanical effects
Semiconductor device modeling
Threshold voltage
Issue Date: Jun-2001
Citation: Hou, Y.T., Li, M.-F. (2001-06). Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation. IEEE Transactions on Electron Devices 48 (6) : 1188-1193. ScholarBank@NUS Repository. https://doi.org/10.1109/16.925246
Abstract: Threshold voltage (VT) shift due to quantum mechanical (QM) effects in pMOSFET is investigated based on a six-band effective mass approximation (EMA). Due to the valence band mixing, both subband energies and density of states (DOS) show remarkable difference from those derived from traditional one-band EMA using the bulk Si effective masses. In comparison with the experimental results, it is found that VT shift in pMOSFET is significantly overestimated by the traditional one-band EMA, however it corresponds with our six-band EMA calculation. Based on the numerical results of our six-band EMA, new effective masses are determined empirically and their electric field dependence is also evaluated. Using these new effective masses instead of the bulk effective masses, one-band EMA still display effectiveness in describing hole quantization and VT shift in an empirical manner. A set of constant energy quantization/DOS effective masses (0.29/1.14, 0.22/0.75, 0.24/0.66m0) for the first three subbands, neglecting their electric field dependence, is proposed for the modeling of QM effects in pMOSFET in this improved version of the one-band EMA formula. Computing time is minimized and results can be obtained with sufficient accuracy and correspond well with reported experimental data, thus the improved one-band EMA formula provide a firm ground in routine device simulation for deep submicron MOS devices.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/80543
ISSN: 00189383
DOI: 10.1109/16.925246
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