Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80513
Title: Growth of crystalline ZnO thin films on silicon (100) and sapphire (0001) by pulsed laser deposition
Authors: Lu, Y.F. 
Ni, H.Q. 
Ren, Z.M.
Wang, W.J. 
Chong, T.C. 
Low, T.S. 
Cheng, B.A.
Wang, J.P.
Jie, Y.X.
Keywords: AFM
Laser ablation
Raman spectroscopy
Thin films
XRD
Zinc oxide
Issue Date: Apr-2000
Source: Lu, Y.F.,Ni, H.Q.,Ren, Z.M.,Wang, W.J.,Chong, T.C.,Low, T.S.,Cheng, B.A.,Wang, J.P.,Jie, Y.X. (2000-04). Growth of crystalline ZnO thin films on silicon (100) and sapphire (0001) by pulsed laser deposition. Journal of Laser Applications 12 (2) : 54-58. ScholarBank@NUS Repository.
Abstract: Zinc oxide thin films have been grown on silicon (100) and sapphire (0001) substrates by pulsed laser deposition. The thin films deposited at different processing parameters were evaluated by x-ray diffraction, Raman spectroscopy, and atomic force microscopy (AFM). The influences of substrate temperature and laser fluence on the properties of the deposited thin films were studied. The full width at half maximum of (0002) x-ray diffraction lines of the films deposited on silicon and sapphire substrates reach a value as small as 0.25° and 0.18°, respectively. The relationship between the intensities of the peaks at 438 and 579 cm-1 in ZnO Raman spectra and deposition temperature were also investigated. Average roughness and surface morphology of the ZnO thin films deposited on Si substrates were evaluated by AFM. © 2000 Laser Institute of America.
Source Title: Journal of Laser Applications
URI: http://scholarbank.nus.edu.sg/handle/10635/80513
ISSN: 1042346X
Appears in Collections:Staff Publications

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