Please use this identifier to cite or link to this item:
|Title:||GaAs FET large-signal model for high power amplifier|
|Source:||Ma, J.,Xiao, Q.,Ooi, B.L.,Zhou, X.D.,Chew, S.T. (1999). GaAs FET large-signal model for high power amplifier. Asia-Pacific Microwave Conference Proceedings, APMC 3 : 642-645. ScholarBank@NUS Repository.|
|Abstract:||A new large signal model of GaAs MESFET transistor is proposed. A commercial packaged high power MESFET transistor (Fujitsu FLC103WG) is adopted for the extraction. Both the hot and cold condition measurements and the pulsed 1/V measurement are performed to derive the model. A simple single-stage class-AB amplifier is subsequently built so as to verify the derived model. The simulation and measurement results of the intermodulation distortion of this amplifier are compared.|
|Source Title:||Asia-Pacific Microwave Conference Proceedings, APMC|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.