Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80454

DC Field	Value
dc.title	Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures
dc.contributor.author	Ling, C.H.
dc.contributor.author	Kwok, C.Y.
dc.contributor.author	Chan, E.G.
dc.contributor.author	Tay, T.M.
dc.date.accessioned	2014-10-07T02:57:43Z
dc.date.available	2014-10-07T02:57:43Z
dc.date.issued	1986-09
dc.identifier.citation	Ling, C.H.,Kwok, C.Y.,Chan, E.G.,Tay, T.M. (1986-09). Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures. Solid State Electronics 29 (9) : 995-997. ScholarBank@NUS Repository.
dc.identifier.issn	00381101
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/80454
dc.source	Scopus
dc.type	Article
dc.contributor.department	ELECTRICAL ENGINEERING
dc.description.sourcetitle	Solid State Electronics
dc.description.volume	29
dc.description.issue	9
dc.description.page	995-997
dc.description.coden	SSELA
dc.identifier.isiut	NOT_IN_WOS
Appears in Collections:	Staff Publications

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