Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/15/6/317
Title: Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
Authors: Tan, L.S. 
Prakash, S. 
Ng, K.M.
Ramam, A. 
Chua, S.J. 
Wee, A.T.S. 
Lim, S.L. 
Issue Date: Jun-2000
Citation: Tan, L.S., Prakash, S., Ng, K.M., Ramam, A., Chua, S.J., Wee, A.T.S., Lim, S.L. (2000-06). Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing. Semiconductor Science and Technology 15 (6) : 585-588. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/15/6/317
Abstract: Ohmic contacts have been fabricated on Si-doped GaN using Ti/Al by low temperature annealing at 500°C. A contact resistivity of 8.6 × 10-6 ohm cm2 was obtained for n-GaN samples doped to 3.67 × 1018 cm-3. Secondary ion mass spectrometry (SIMS) analysis showed that Al diffused through the Ti layer after annealing. Furthermore, energy dispersive x-ray spectroscopy (EDS) analysis showed that reaction products of Al, Ti, Ga and N were present at the interface. Hence, a complex ternary or quaternary nitride as a possible low barrier height material to n-GaN may have resulted in good ohmic contact. Photoluminescence (PL) showed that there was no degradation in the epilayer quality of the film after annealing at 500°C for 25 minutes.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/80446
ISSN: 02681242
DOI: 10.1088/0268-1242/15/6/317
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

15
checked on Dec 13, 2018

WEB OF SCIENCETM
Citations

14
checked on Dec 13, 2018

Page view(s)

63
checked on Dec 15, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.