Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80410
Title: Exploratory observations of effect of rapid thermal processing on silicon minority carrier lifetime using laser microwave photoconductance method
Authors: Choi, W.K. 
Ah, L.K.
Chan, Y.M.
Raman, A. 
Issue Date: May-1995
Citation: Choi, W.K.,Ah, L.K.,Chan, Y.M.,Raman, A. (1995-05). Exploratory observations of effect of rapid thermal processing on silicon minority carrier lifetime using laser microwave photoconductance method. Journal of the Electrochemical Society 142 (5) : 1651-1653. ScholarBank@NUS Repository.
Abstract: The effect on the minority carrier lifetime of Czochralski wafers undergoing rapid thermal processing is being examined. It was found that the minority carrier lifetime of silicon increased significantly after the rapid thermal process was completed. It was also discovered that the lifetime took more than 200 h to reach a steady-state value after the rapid thermal process. Once this value had been reached, it remained fairly stable even at elevated (150°C) temperature. Oxygen annihilation of Czochralski wafer and modification of the Si-SiO2 interface by RTP are suggested as possible explanations for the observation.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/80410
ISSN: 00134651
Appears in Collections:Staff Publications

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