Please use this identifier to cite or link to this item:
|Title:||Enhanced blue-light emission from InGaN/GaN quantum wells grown over multilayered buffer on silicon substrate by metal organic chemical vapor deposition|
|Authors:||Zhang, X. |
|Source:||Zhang, X.,Chua, S.-J.,Liu, W.,Li, P. (1999-11). Enhanced blue-light emission from InGaN/GaN quantum wells grown over multilayered buffer on silicon substrate by metal organic chemical vapor deposition. Physica Status Solidi (B) Basic Research 216 (1) : 307-310. ScholarBank@NUS Repository.|
|Abstract:||InGaN/GaN multiple quantum wells have been grown on silicon-(001) substrate with specially designed composite intermediate layers with single or double GaN/Alx-Ga1-xN (x = 0.2) multilayered buffers by metal-organic chemical vapor deposition and characterized by photoluminescence spectroscopy. It was found that InGaN/GaN multiple quantum wells grown on composite intermediate layers with double multilayered buffers gave narrower and enhanced InGaN quantum well-related excitonic emission, and suppressed GaN band-edge-related emission as compared with those samples grown over single multilayered buffer under identical reactor configuration and growth conditions. This fact indicates that by using the proposed composite intermediate layers with double multilayered buffers, the crystalline quality of the InGaN/GaN multiple quantum wells grown on a silicon substrate can be significantly improved.|
|Source Title:||Physica Status Solidi (B) Basic Research|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.