Please use this identifier to cite or link to this item:
|Title:||Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N2, O2 and N2O|
|Authors:||Choi, W.K. |
|Keywords:||Rapid thermal annealing|
|Citation:||Choi, W.K.,Tan, L.S.,Lim, J.Y.,Pek, S.G. (1999). Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N2, O2 and N2O. Thin Solid Films 343-344 (1-2) : 105-107. ScholarBank@NUS Repository.|
|Abstract:||The effects of annealing ambient (Ar, N2, O2 and N2O) and durations (60 and 200 s) of rapid thermal annealing (RTA) on the insulating property of RF sputtered tantalum pentoxide films were examined. It was found that films sputtered at 200 W were more leaky than those sputtered at 100 W. It was also discovered that RTA in O2 and N2O and at a longer duration (200 s) improved the insulating property of the films. This improvement was suggested to be due to a layer of SiO2 formed at the Si-Ta2O5 interface when annealed. The conduction mechanism for the O2 and N2O annealed films was found to be of Poole-Frenkel type. © 1999 Elsevier Science S.A. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 9, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.