Please use this identifier to cite or link to this item:
|Title:||Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's|
|Authors:||Ang, D.S. |
|Citation:||Ang, D.S.,Ling, C.H. (1996-12-01). Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's. Japanese Journal of Applied Physics, Part 2: Letters 35 (12 A) : L1572-L1574. ScholarBank@NUS Repository.|
|Abstract:||Hot carrier immunity of LDD buried-channel p-MOSFET's is severely degraded following tungsten polycidation of device gate and incorporation of F in the oxide, in contrast to the reliability enhancement commonly observed for n-MOSFET's. Possible mechanisms involving enhanced trapping at F-related oxide bulk traps and reduced field-induced detrapping rate are discussed. The reduction in hot-carrier reliability of WSix gate p-MOSFET's may raise concern over the use of WF6-based tungsten polycide technology in deep submicrometer CMOS circuits.|
|Source Title:||Japanese Journal of Applied Physics, Part 2: Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.