Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80382
Title: Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
Authors: Ang, D.S. 
Ling, C.H. 
Issue Date: 1-Dec-1996
Citation: Ang, D.S.,Ling, C.H. (1996-12-01). Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's. Japanese Journal of Applied Physics, Part 2: Letters 35 (12 A) : L1572-L1574. ScholarBank@NUS Repository.
Abstract: Hot carrier immunity of LDD buried-channel p-MOSFET's is severely degraded following tungsten polycidation of device gate and incorporation of F in the oxide, in contrast to the reliability enhancement commonly observed for n-MOSFET's. Possible mechanisms involving enhanced trapping at F-related oxide bulk traps and reduced field-induced detrapping rate are discussed. The reduction in hot-carrier reliability of WSix gate p-MOSFET's may raise concern over the use of WF6-based tungsten polycide technology in deep submicrometer CMOS circuits.
Source Title: Japanese Journal of Applied Physics, Part 2: Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80382
ISSN: 00214922
Appears in Collections:Staff Publications

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