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|Title:||Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parameters|
|Authors:||Rao, Rapeta V.V.V.J. |
|Citation:||Rao, Rapeta V.V.V.J.,Chong, T.C.,Tan, L.S.,Lau, W.S. (1999). Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parameters. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD : 314-317. ScholarBank@NUS Repository.|
|Abstract:||GaAs and Al0.3Ga0.7As epilayers grown at low-temperature (LT) by molecular beam epitaxy (MBE) were used as insulators in the fabrication of MISFET devices. Long term degradation studies were carried out to identify failure mechanisms and validate the reliability aspect of these devices. 1000 angstroms and 250 angstroms thick LT-Al0.3Ga0.7As and 250 angstroms thick LT-GaAs MISFETs displayed quite stable characteristics up to 1000 hrs of stressing at 210 °C. 1000 angstroms thick LT-GaAs MISFET devices exhibited considerable degradation in breakdown voltage and output resistance, RDS, measured at the gate bias of pinch-off voltage. The poor performance of thicker LT-GaAs samples is due to the compositional changes at the interface of the insulator and the active layer during the thermal stress.|
|Source Title:||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD|
|Appears in Collections:||Staff Publications|
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