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| Title: | Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers | Authors: | Senapati, B. Samanta, S.K. Maikap, S. Bera, L.K. Maiti, C.K. |
Issue Date: | 18-Sep-2000 | Citation: | Senapati, B.,Samanta, S.K.,Maikap, S.,Bera, L.K.,Maiti, C.K. (2000-09-18). Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers. Applied Physics Letters 77 (12) : 1840-1842. ScholarBank@NUS Repository. | Abstract: | Gate-quality ultrathin silicon dioxide films on strained-Si0.74Ge0.26 layers have been deposited by microwave plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate. Effect of nitric-oxide (NO)-plasma treatment on the electrical properties of the deposited oxides have been studied using a metal-insulator-semiconductor structure. A significant improvement in the interface trap level density (Dit) and charge trapping behavior under Fowler-Nordheim constant current stressing is observed for NO-plasma treated deposited oxide films. © 2000 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80378 | ISSN: | 00036951 |
| Appears in Collections: | Staff Publications |
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