Please use this identifier to cite or link to this item:
|Title:||Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers|
|Citation:||Senapati, B.,Samanta, S.K.,Maikap, S.,Bera, L.K.,Maiti, C.K. (2000-09-18). Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers. Applied Physics Letters 77 (12) : 1840-1842. ScholarBank@NUS Repository.|
|Abstract:||Gate-quality ultrathin silicon dioxide films on strained-Si0.74Ge0.26 layers have been deposited by microwave plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate. Effect of nitric-oxide (NO)-plasma treatment on the electrical properties of the deposited oxides have been studied using a metal-insulator-semiconductor structure. A significant improvement in the interface trap level density (Dit) and charge trapping behavior under Fowler-Nordheim constant current stressing is observed for NO-plasma treated deposited oxide films. © 2000 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 14, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.