Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80375
Title: Effects of hydrostatic pressure on Raman scattering in Ge quantum dots
Authors: Teo, K.L. 
Qin, L.
Noordin, I.M.
Karunasiri, G. 
Shen, Z.X. 
Schmidt, O.G.
Eberl, K.
Queisser, H.J.
Issue Date: 2001
Source: Teo, K.L.,Qin, L.,Noordin, I.M.,Karunasiri, G.,Shen, Z.X.,Schmidt, O.G.,Eberl, K.,Queisser, H.J. (2001). Effects of hydrostatic pressure on Raman scattering in Ge quantum dots. Physical Review B - Condensed Matter and Materials Physics 63 (12) : 1213061-1213064. ScholarBank@NUS Repository.
Abstract: Raman scattering under hydrostatic pressure is used to investigate the phonon modes of self-organized Ge quantum dots (QD's) grown by solid source molecular-beam epitaxy. The pressure dependence of Ge-Ge phonon and Si acoustical-overtone (2TA) modes are studied from 0 to 67 kbar at room temperature. Our results show that the overlapping spectra of the Ge-Ge phonon and Si 2TA modes occur around 303 cm-1 at ambient pressure which can be resolved at relatively low pressure of about 3 kbar. The linear pressure coefficient of Ge-Ge phonon mode in QD's is found to be 0.29 cm-1/kbar, which is slightly smaller than the corresponding quantity in bulk Ge.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/80375
ISSN: 01631829
Appears in Collections:Staff Publications

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