Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/30/17/007
Title: Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy
Authors: Chim, W.K. 
Chan, D.S.H. 
Tao, J.M. 
Lou, C.L.
Leang, S.E.
Teow, C.K.
Issue Date: 7-Sep-1997
Citation: Chim, W.K., Chan, D.S.H., Tao, J.M., Lou, C.L., Leang, S.E., Teow, C.K. (1997-09-07). Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy. Journal of Physics D: Applied Physics 30 (17) : 2411-2420. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/30/17/007
Abstract: Photon emission spectra of double-diffused drain (DDD) and large-angle-tilt-implanted-drain (LATID) submicron n-channel MOSFETs after hot-carrier stressing under maximum substrate current lsub(max) and maximum gate current lg(max) conditions were investigated. The results showed that the difference spectra, obtained by subtracting the devices' pre-stress spectra from the post-stress spectra, could be used for distinguishing the effects of interface states and trapped charges. Interface states cause enhanced surface scattering and therefore increase the efficiency of photon emission while trapped charges drive the current away from the surface of the channel and reduce the photon emission efficiency.
Source Title: Journal of Physics D: Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/80361
ISSN: 00223727
DOI: 10.1088/0022-3727/30/17/007
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