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|Title:||Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy|
|Authors:||Lau, W.S. |
|Citation:||Lau, W.S.,Zhong, L.,Lee, A.,See, C.H.,Han, T.,Sandier, N.P.,Chong, T.C. (1997-07-28). Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy. Applied Physics Letters 71 (4) : 500-502. ScholarBank@NUS Repository.|
|Abstract:||Defect states responsible for leakage current in ultrathin (physical thickness|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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