Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80355
Title: Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy
Authors: Lau, W.S. 
Zhong, L.
Lee, A.
See, C.H.
Han, T.
Sandier, N.P.
Chong, T.C. 
Issue Date: 28-Jul-1997
Citation: Lau, W.S.,Zhong, L.,Lee, A.,See, C.H.,Han, T.,Sandier, N.P.,Chong, T.C. (1997-07-28). Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy. Applied Physics Letters 71 (4) : 500-502. ScholarBank@NUS Repository.
Abstract: Defect states responsible for leakage current in ultrathin (physical thickness
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80355
ISSN: 00036951
Appears in Collections:Staff Publications

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