Depth profiling of GaN by cathodoluminescence microanalysis

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.123460

Title:	Depth profiling of GaN by cathodoluminescence microanalysis
Authors:	Fleischer, K. Toth, M. Phillips, M.R. Zou, J. Li, G. Chua, S.J.
Issue Date:	1999
Citation:	Fleischer, K., Toth, M., Phillips, M.R., Zou, J., Li, G., Chua, S.J. (1999). Depth profiling of GaN by cathodoluminescence microanalysis. Applied Physics Letters 74 (8) : 1114-1116. ScholarBank@NUS Repository. https://doi.org/10.1063/1.123460
Abstract:	We present the results of a depth-resolved cathodoluminescence (CL) and transmission electron microscopy study of autodoped GaN grown on sapphire. Depth-resolved CL analysis can be used for depth profiling of the yellow luminescence (YL) center concentration which was found to increase with depth. The results are consistent with the (ON-VGa)2- complex model of YL centers [J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996) and T. Mattila and R. M. Nieminen, Phys. Rev. B 55, 9571 (1996)]. Depth profiling of the near-edge emission in GaN layers thicker than ∼0.5 μm is not possible due to strong self-absorption. © 1999 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/80350
ISSN:	00036951
DOI:	10.1063/1.123460
Appears in Collections:	Staff Publications

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