Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80347
Title: Densification of radio frequency sputtered silicon oxide films by rapid thermal annealing
Authors: Choi, W.K. 
Choo, C.K.
Han, K.K.
Chen, J.H. 
Loh, F.C. 
Tan, K.L. 
Issue Date: 15-Feb-1998
Source: Choi, W.K.,Choo, C.K.,Han, K.K.,Chen, J.H.,Loh, F.C.,Tan, K.L. (1998-02-15). Densification of radio frequency sputtered silicon oxide films by rapid thermal annealing. Journal of Applied Physics 83 (4) : 2308-2314. ScholarBank@NUS Repository.
Abstract: A study of the densification of radio frequency sputtered silicon oxide films by rapid thermal annealing was undertaken using both physical (etching, refractive index, and density calculation) and structural [infrared and x-ray photoelectron spectroscopy (XPS)] techniques. It was discovered that the etch rate of annealed films is reduced drastically, compared with as-deposited films and that the refractive index increases with increasing annealing temperature (Tp) or annealing time (tp). The film density also increases as Tp or tp increases and we conclude that annealed films have become denser as compared to the as-deposited films. We also suggest that increasing tp would be more efficient than raising Tp for film densification. Infrared spectrum analysis results show that with increasing Tp or tp, strain in the films has become more relaxed, and a significant amount of the surface hydroxyl groups in the annealed films was removed. The XPS analysis results show that a substantial amount of suboxide species exist within 30-40 Å of the oxide at the Si-SiO2 interface and that the Si-SiO2 interface is not abrupt. © 1998 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/80347
ISSN: 00218979
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

38
checked on Jan 12, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.