Please use this identifier to cite or link to this item: https://doi.org/10.1109/68.84467
Title: Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure
Authors: Wan, H.W.
Chong, T.C. 
Chua, S.J. 
Issue Date: Aug-1991
Source: Wan, H.W., Chong, T.C., Chua, S.J. (1991-08). Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure. IEEE Photonics Technology Letters 3 (8) : 730-732. ScholarBank@NUS Repository. https://doi.org/10.1109/68.84467
Abstract: It is shown that In1-xGaxAs/ In0.52Al0.48As MQW structures with the wells under tensile strain obtained by the appropriate selection of the Ga mole fraction and well size can achieve polarization-insensitive optical switching and modulation for a wide range of wavelengths between 1.0 and 1.6 μm. For example, a change in refractive index of -0.5% at about 1.55 μm will facilitate an intersectional angle of more than 10° in a total internal reflection switch which can be readily fabricated. Hence, this material system is promising for long-wavelength polarization-insensitive semiconductor optoelectronic devices.
Source Title: IEEE Photonics Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80334
ISSN: 10411135
DOI: 10.1109/68.84467
Appears in Collections:Staff Publications

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