Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80332
Title: Confinement and electron-phonon interactions of the E1 exciton in self-organized Ge quantum dots
Authors: Kwok, S.H.
Yu, P.Y.
Tung, C.H.
Zhang, Y.H.
Li, M.F. 
Peng, C.S.
Zhou, J.M.
Issue Date: 1999
Citation: Kwok, S.H.,Yu, P.Y.,Tung, C.H.,Zhang, Y.H.,Li, M.F.,Peng, C.S.,Zhou, J.M. (1999). Confinement and electron-phonon interactions of the E1 exciton in self-organized Ge quantum dots. Physical Review B - Condensed Matter and Materials Physics 59 (7) : 4980-4984. ScholarBank@NUS Repository.
Abstract: We have utilized resonant Raman scattering to investigate the phonon modes of self-organized Ge quantum dots grown by molecular-beam epitaxy. Both Ge-Ge and Si-Ge phonon modes are found to exhibit strong enhancements at the E1 exciton. The strain in the quantum dots deduced from the phonon energies is consistent with the results of high-resolution transmission electron microscopy. An upper bound on the confinement energy of the E1 exciton in quantum dots was deduced. The enhancement strength in the Si-Ge phonon indicates strong interaction between this mode and the E1 exciton of the Ge dots. © 1999 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/80332
ISSN: 01631829
Appears in Collections:Staff Publications

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