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|Title:||Confinement and electron-phonon interactions of the E1 exciton in self-organized Ge quantum dots|
|Citation:||Kwok, S.H.,Yu, P.Y.,Tung, C.H.,Zhang, Y.H.,Li, M.F.,Peng, C.S.,Zhou, J.M. (1999). Confinement and electron-phonon interactions of the E1 exciton in self-organized Ge quantum dots. Physical Review B - Condensed Matter and Materials Physics 59 (7) : 4980-4984. ScholarBank@NUS Repository.|
|Abstract:||We have utilized resonant Raman scattering to investigate the phonon modes of self-organized Ge quantum dots grown by molecular-beam epitaxy. Both Ge-Ge and Si-Ge phonon modes are found to exhibit strong enhancements at the E1 exciton. The strain in the quantum dots deduced from the phonon energies is consistent with the results of high-resolution transmission electron microscopy. An upper bound on the confinement energy of the E1 exciton in quantum dots was deduced. The enhancement strength in the Si-Ge phonon indicates strong interaction between this mode and the E1 exciton of the Ge dots. © 1999 The American Physical Society.|
|Source Title:||Physical Review B - Condensed Matter and Materials Physics|
|Appears in Collections:||Staff Publications|
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