Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80331
Title: Compound emitter heterojunction bipolar transistor
Authors: Chor, E.F. 
Peng, C.J. 
Issue Date: Dec-1993
Source: Chor, E.F.,Peng, C.J. (1993-12). Compound emitter heterojunction bipolar transistor. COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 12 (4) : 319-330. ScholarBank@NUS Repository.
Abstract: A compound emitter heterojunction bipolar transistor (HBT) structure that incorporates an additional heterojunction within the emitter for minority carrier confinement has been proposed. In this new device configuration, the single wide band-gap emitter layer in a conventional HBT is replaced by two sub-layers of wide band-gap material, with the sub-layer nearer the base having a narrower band-gap. By means of numerical simulations, the compound emitter HBT was found to perform better than comparable conventional HBTs. With the AlGaAs(n)/GaAs heterostructure system, the optimum compound emitter HBT structure was found to be Al0.3Ga0.7As(n)-Al0.2Ga0.8As(n)/GaAs with grading at the two hetero-interfaces. It has a low turn-on voltage that is almost identical to that of a homojunction GaAs bipolar transistor with similar doping conditions. Compared with a conventional single emitter layer Al0.3Ga0.7As/GaAs HBT, the optimum compound emitter HBT has an enhancement in the current gain by approximately 2 folds, an improvement in the uniform current gain region from 2 to 4 decades of collector current density, and a slight increase in the unity-gain cut-off frequency fT by about 7%.
Source Title: COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/80331
ISBN: 1873936303
ISSN: 03321649
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

33
checked on Feb 23, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.