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|Title:||Composite step-graded collector of InP/InGaAs/lnP DHBT for minimised carrier blocking|
|Authors:||Chor, E.F. |
|Keywords:||Heterojunction bipolar transistors|
|Citation:||Chor, E.F.,Peng, C.J. (1996-07-18). Composite step-graded collector of InP/InGaAs/lnP DHBT for minimised carrier blocking. Electronics Letters 32 (15) : 1409-1410. ScholarBank@NUS Repository.|
|Abstract:||A composite step-graded collector of InP/InGaAs/InP DHBT has been investigated for minimised carrier blocking. The optimised collector has the following sub-layers: a 100Å n- InGaAs layer; three 200Å n- InGaAsP layers; and a 100Å, n = 3 × 1017cm-3 InP layer, and the rest are n- InP. The InGaAsP layers should be chosen to give approximately equal band offset at the heterointerfaces.|
|Source Title:||Electronics Letters|
|Appears in Collections:||Staff Publications|
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