Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80323
Title: Characterization of rf-sputtered yttrium oxide films
Authors: Ling, C. 
Bhaskaran, J.
Choi, W. 
Issue Date: May-1992
Source: Ling, C.,Bhaskaran, J.,Choi, W. (1992-05). Characterization of rf-sputtered yttrium oxide films. Vacuum 43 (5-7) : 753-755. ScholarBank@NUS Repository.
Abstract: The results of current-voltage and capacitance-voltage measurements on 600 Å yttrium oxide films, prepared by rf-sputtering in 10-2 torr of argon and at substrate temperatures 300-400°C are presented. Films exhibit good leakage current characteristics after annealing in hydrogen and posses high resistivity, in excess of 1017 ohm-cm. A Poole-Frenkel conduction mechanism is observed. Permitivity is relatively independent of frequency up to 1 MHz, but drops off at higher frequencies. The dissipation factor is of the order of 0.003 over the frequency range 104- 106 Hz. C-V plots exhibit hysteresis, which is attributed to polarization. © 1992.
Source Title: Vacuum
URI: http://scholarbank.nus.edu.sg/handle/10635/80323
ISSN: 0042207X
Appears in Collections:Staff Publications

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