Please use this identifier to cite or link to this item:
|Title:||Characterization of rf-sputtered yttrium oxide films|
|Authors:||Ling, C. |
|Source:||Ling, C.,Bhaskaran, J.,Choi, W. (1992-05). Characterization of rf-sputtered yttrium oxide films. Vacuum 43 (5-7) : 753-755. ScholarBank@NUS Repository.|
|Abstract:||The results of current-voltage and capacitance-voltage measurements on 600 Å yttrium oxide films, prepared by rf-sputtering in 10-2 torr of argon and at substrate temperatures 300-400°C are presented. Films exhibit good leakage current characteristics after annealing in hydrogen and posses high resistivity, in excess of 1017 ohm-cm. A Poole-Frenkel conduction mechanism is observed. Permitivity is relatively independent of frequency up to 1 MHz, but drops off at higher frequencies. The dissipation factor is of the order of 0.003 over the frequency range 104- 106 Hz. C-V plots exhibit hysteresis, which is attributed to polarization. © 1992.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 23, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.