Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80319
Title: Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications
Authors: Lau, Wai Shing 
Tan, Thiam Siew
Sandler, Nathan P.
Page, Barry S.
Issue Date: Feb-1995
Citation: Lau, Wai Shing,Tan, Thiam Siew,Sandler, Nathan P.,Page, Barry S. (1995-02). Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers 34 (2 B) : 757-761. ScholarBank@NUS Repository.
Abstract: Defect states in tantalum pentoxide films grown by low-pressure metal-organic chemical vapor deposition on silicon wafers have been studied with Al/Ta2O5/p+-Si and Al/Ta2O5/n+-Si capacitor structures by the zero-bias thermally stimulated current technique. It was demonstrated that a shallow band of defect states is responsible for leakage current. The shallow band of defect states can be suppressed by low-temperature post metallization annealing, resulting in a reduction of leakage current for both positive gate bias and negative gate bias. However, the reduction in leakage current for positive gate bias is much stronger than that for negative gate bias.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/80319
Appears in Collections:Staff Publications

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