Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/80317
DC Field | Value | |
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dc.title | Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator | |
dc.contributor.author | Rao, R.V.V.V.J. | |
dc.contributor.author | Chong, T.C. | |
dc.contributor.author | Lau, W.S. | |
dc.contributor.author | Tan, L.S. | |
dc.contributor.author | Lim, N. | |
dc.date.accessioned | 2014-10-07T02:56:12Z | |
dc.date.available | 2014-10-07T02:56:12Z | |
dc.date.issued | 1997-07-03 | |
dc.identifier.citation | Rao, R.V.V.V.J.,Chong, T.C.,Lau, W.S.,Tan, L.S.,Lim, N. (1997-07-03). Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator. Electronics Letters 33 (14) : 1258-1260. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00135194 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80317 | |
dc.description.abstract | Al0.3Ga0.7As epilayers grown at low-temperature (LT) by molecular beam epitaxy (MBE) were used as insulators in the fabrication of MISFET devices. An LT-Al0.3Ga0.7As MISFET, having a gate length of 2 μm, exhibited a transconductance of 161mS/mm, an IDSS of 320mA/mm and a maximum drain voltage of 44.7V, resulting in an I-V product of 1.65W/mm; it displayed improved frequency dispersion characteristics over that of an LT-GaAs MISFET. | |
dc.source | Scopus | |
dc.subject | Field effect transistors | |
dc.subject | MISFET | |
dc.subject | Semiconductor devices | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Electronics Letters | |
dc.description.volume | 33 | |
dc.description.issue | 14 | |
dc.description.page | 1258-1260 | |
dc.description.coden | ELLEA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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