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|Title:||Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator|
|Authors:||Rao, R.V.V.V.J. |
|Keywords:||Field effect transistors|
|Citation:||Rao, R.V.V.V.J.,Chong, T.C.,Lau, W.S.,Tan, L.S.,Lim, N. (1997-07-03). Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator. Electronics Letters 33 (14) : 1258-1260. ScholarBank@NUS Repository.|
|Abstract:||Al0.3Ga0.7As epilayers grown at low-temperature (LT) by molecular beam epitaxy (MBE) were used as insulators in the fabrication of MISFET devices. An LT-Al0.3Ga0.7As MISFET, having a gate length of 2 μm, exhibited a transconductance of 161mS/mm, an IDSS of 320mA/mm and a maximum drain voltage of 44.7V, resulting in an I-V product of 1.65W/mm; it displayed improved frequency dispersion characteristics over that of an LT-GaAs MISFET.|
|Source Title:||Electronics Letters|
|Appears in Collections:||Staff Publications|
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