Please use this identifier to cite or link to this item: https://doi.org/10.1016/0038-1098(95)00700-8
Title: Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN
Authors: Fan, W.J.
Li, M.F. 
Chong, T.C. 
Xia, J.B.
Keywords: A. semiconductors
D. electronic band structure
Issue Date: Feb-1996
Citation: Fan, W.J., Li, M.F., Chong, T.C., Xia, J.B. (1996-02). Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN. Solid State Communications 97 (5) : 381-384. ScholarBank@NUS Repository. https://doi.org/10.1016/0038-1098(95)00700-8
Abstract: The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Γ and those of the conduction band at Γ and X are obtained. The energies of Γ, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.
Source Title: Solid State Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/80305
ISSN: 00381098
DOI: 10.1016/0038-1098(95)00700-8
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