Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.356020
Title: Analysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide films
Authors: Choi, W.K. 
Ling, C.H. 
Issue Date: 1994
Citation: Choi, W.K., Ling, C.H. (1994). Analysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide films. Journal of Applied Physics 75 (8) : 3987-3990. ScholarBank@NUS Repository. https://doi.org/10.1063/1.356020
Abstract: The field-dependent behavior of the conductivity (σ) of thermally oxidized tantalum oxide films has been analyzed based on a model we developed previously [W. K. Choi, J. J. Delima, and A. E. Owen, Phys. Status Solidi B 137, 345 (1986)]. Comparison with published data shows that the agreement in the log(σ) versus the square root of the applied field is very good. The relative dielectric constants obtained from the simulations compared very favorably with the published results. The donor density for the tantalum oxide films were estimated to be between 1.7×1014 and 2×10 17 cm-3 depending on the films preparation conditions.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/80294
ISSN: 00218979
DOI: 10.1063/1.356020
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