Please use this identifier to cite or link to this item:
|Title:||Analysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide films|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K., Ling, C.H. (1994). Analysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide films. Journal of Applied Physics 75 (8) : 3987-3990. ScholarBank@NUS Repository. https://doi.org/10.1063/1.356020|
|Abstract:||The field-dependent behavior of the conductivity (σ) of thermally oxidized tantalum oxide films has been analyzed based on a model we developed previously [W. K. Choi, J. J. Delima, and A. E. Owen, Phys. Status Solidi B 137, 345 (1986)]. Comparison with published data shows that the agreement in the log(σ) versus the square root of the applied field is very good. The relative dielectric constants obtained from the simulations compared very favorably with the published results. The donor density for the tantalum oxide films were estimated to be between 1.7×1014 and 2×10 17 cm-3 depending on the films preparation conditions.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 6, 2018
checked on Sep 7, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.