Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/80288
DC Field | Value | |
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dc.title | Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47As | |
dc.contributor.author | Chor, E.F. | |
dc.contributor.author | Chong, W.K. | |
dc.contributor.author | Heng, C.H. | |
dc.date.accessioned | 2014-10-07T02:55:52Z | |
dc.date.available | 2014-10-07T02:55:52Z | |
dc.date.issued | 1998-09-01 | |
dc.identifier.citation | Chor, E.F.,Chong, W.K.,Heng, C.H. (1998-09-01). Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47As. Journal of Applied Physics 84 (5) : 2977-2979. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80288 | |
dc.description.abstract | (Pd,Ti,Au) contacts, Ti/Pd/Au and Pd/Ti/Pd/Au, to In0.53Ga0.47As have been investigated for applications in InP-based devices. A thin interfacial Pd layer, with an optimum thickness of ∼100 Å, was found to be essential in contact to P+-In0.53Ga0.47As but undesirable to n+-In0.53Ga0.47As. Pd (100 Å)/Ti (200 Å)/Pd (200 Å)/Au (2000 Å) and Ti (200 Å)/Pd (200 Å)/Au (2000 Å) yielded, respectively, a minimum specific contact resistance (pc) of 1.68×10-6 Ω cm2 and 2.54 ×10-7 Ω cm2 to p+-and n+-In0.53Ga0.47As (p+=n+=1×1019 cm-3). (Pd,Ti,Au) contacts have shown to outperform (Ti,Pt,Au) counterparts in ρc. In addition, it has been seen that contact anneal beyond 400 ̊C should be avoided for thin base InP-based heterojunction bipolar transistors. © 1998 American Institute of Physics. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 84 | |
dc.description.issue | 5 | |
dc.description.page | 2977-2979 | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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