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|Title:||Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47As|
|Authors:||Chor, E.F. |
|Citation:||Chor, E.F.,Chong, W.K.,Heng, C.H. (1998-09-01). Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47As. Journal of Applied Physics 84 (5) : 2977-2979. ScholarBank@NUS Repository.|
|Abstract:||(Pd,Ti,Au) contacts, Ti/Pd/Au and Pd/Ti/Pd/Au, to In0.53Ga0.47As have been investigated for applications in InP-based devices. A thin interfacial Pd layer, with an optimum thickness of ∼100 Å, was found to be essential in contact to P+-In0.53Ga0.47As but undesirable to n+-In0.53Ga0.47As. Pd (100 Å)/Ti (200 Å)/Pd (200 Å)/Au (2000 Å) and Ti (200 Å)/Pd (200 Å)/Au (2000 Å) yielded, respectively, a minimum specific contact resistance (pc) of 1.68×10-6 Ω cm2 and 2.54 ×10-7 Ω cm2 to p+-and n+-In0.53Ga0.47As (p+=n+=1×1019 cm-3). (Pd,Ti,Au) contacts have shown to outperform (Ti,Pt,Au) counterparts in ρc. In addition, it has been seen that contact anneal beyond 400 ̊C should be avoided for thin base InP-based heterojunction bipolar transistors. © 1998 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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