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|Title:||Acceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions|
|Authors:||Chua, S.J. |
|Citation:||Chua, S.J.,Xu, S.J.,Tang, X.H. (1996-04-10). Acceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions. Modern Physics Letters B 10 (8) : 323-328. ScholarBank@NUS Repository.|
|Abstract:||The radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acceptors is investigated in modulation-doped GaAs/AlxGa1-xAs heterojunctions. With increase in temperature, a blue shift of about 2.5 meV is observed for a temperature change from 4 K to 40 K. Also, observed is a rapid decrease in intensity of its low energy peaks. This change in line shape of the acceptor-related emission in the GaAs/AlxGa1-xAs heterojunctions is accounted for by the effect of band bending and the spatial distribution of acceptors. © World Scientific Publishing Company.|
|Source Title:||Modern Physics Letters B|
|Appears in Collections:||Staff Publications|
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