Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80285
Title: Acceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions
Authors: Chua, S.J. 
Xu, S.J. 
Tang, X.H.
Issue Date: 10-Apr-1996
Citation: Chua, S.J.,Xu, S.J.,Tang, X.H. (1996-04-10). Acceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions. Modern Physics Letters B 10 (8) : 323-328. ScholarBank@NUS Repository.
Abstract: The radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acceptors is investigated in modulation-doped GaAs/AlxGa1-xAs heterojunctions. With increase in temperature, a blue shift of about 2.5 meV is observed for a temperature change from 4 K to 40 K. Also, observed is a rapid decrease in intensity of its low energy peaks. This change in line shape of the acceptor-related emission in the GaAs/AlxGa1-xAs heterojunctions is accounted for by the effect of band bending and the spatial distribution of acceptors. © World Scientific Publishing Company.
Source Title: Modern Physics Letters B
URI: http://scholarbank.nus.edu.sg/handle/10635/80285
ISSN: 02179849
Appears in Collections:Staff Publications

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