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https://doi.org/10.1109/55.596926
DC Field | Value | |
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dc.title | A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's | |
dc.contributor.author | Lou, C.L. | |
dc.contributor.author | Chim, W.K. | |
dc.contributor.author | Chan, D.S.H. | |
dc.contributor.author | Pan, Y. | |
dc.date.accessioned | 2014-10-07T02:55:44Z | |
dc.date.available | 2014-10-07T02:55:44Z | |
dc.date.issued | 1997-07 | |
dc.identifier.citation | Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1997-07). A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's. IEEE Electron Device Letters 18 (7) : 327-329. ScholarBank@NUS Repository. https://doi.org/10.1109/55.596926 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80276 | |
dc.description.abstract | A simple new DC technique is developed to extract the gate bias dependent effective channel mobility (μeff) and series resistances (Rs and Rd) of graded junction n- and p-channel MOSFET's. This technique is found to be accurate and effective for devices with differing channel lengths and also for devices after nonuniform hot-carrier degradation. The parameter values extracted provide further insight into the damage mechanisms of hot-carrier stressed graded junction nMOSFET's and are usable in circuit and reliability simulation. This technique is especially useful for the optimization of hot-carrier resistant structures of submicrometer MOSFET's. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.596926 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1109/55.596926 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 18 | |
dc.description.issue | 7 | |
dc.description.page | 327-329 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | A1997XG99700007 | |
Appears in Collections: | Staff Publications |
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