Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.596926
Title: A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's
Authors: Lou, C.L.
Chim, W.K. 
Chan, D.S.H. 
Pan, Y.
Issue Date: Jul-1997
Citation: Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1997-07). A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's. IEEE Electron Device Letters 18 (7) : 327-329. ScholarBank@NUS Repository. https://doi.org/10.1109/55.596926
Abstract: A simple new DC technique is developed to extract the gate bias dependent effective channel mobility (μeff) and series resistances (Rs and Rd) of graded junction n- and p-channel MOSFET's. This technique is found to be accurate and effective for devices with differing channel lengths and also for devices after nonuniform hot-carrier degradation. The parameter values extracted provide further insight into the damage mechanisms of hot-carrier stressed graded junction nMOSFET's and are usable in circuit and reliability simulation. This technique is especially useful for the optimization of hot-carrier resistant structures of submicrometer MOSFET's.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80276
ISSN: 07413106
DOI: 10.1109/55.596926
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